Over the past few years, MAPbI 3-based perovskite solar cells (PSCs) have made great progress with a current certificated efficiency of 25.2% (NREL). However, perovskite semiconductors have many basic physical properties that are sensitive to the intrinsic defects of the material and to intentional doping, such as bipolar doping, carrier transfer characteristic, etc. However, the level of understanding of these basic semiconductor physics is far below the device fabrication process. For example, doping can control the physical properties of almost all modern semiconductors, which is also the premise used to realize their industrial applications. Many traditional semiconductor materials, like silicon, indium phosphide, and gallium nitride, have achieved controlled bipolar doping of both N type and P type ( Wan et al., 2018 Yamada et al., 2019). To change this electronic property, doping technology is widely used in semiconductor-based photovoltaic devices, especially for silicon and CIGS solar cells ( Gao et al., 2011 Zhu et al., 2012 Jena et al., 2019). The grain boundaries and crystal surfaces of polycrystalline thin films have inclusion high-density charge traps, which consequently result in the high resistance of perovskite thin films.
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